Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser performance

Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser performance

Summary form only given. In this paper, we report the fabrication and characterization of otherwise identical diode lasers with non-intermixed and intermixed active regions. Measured characteristics of these lasers are used to extract information about changes in threshold current density, internal...

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Hauptverfasser: Yellowhair, J., Yan-Rui Zhao, Hongjun Cao, Hai Ling, Chiyu Liu, Jinhyun Lee, Smolyakov, G.A., Osinski, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Data mining
Density measurement
Diode lasers
Gain measurement
Gallium arsenide
Indium gallium arsenide
Laser transitions
Loss measurement
Optical device fabrication
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Beschreibung
Zusammenfassung:Summary form only given. In this paper, we report the fabrication and characterization of otherwise identical diode lasers with non-intermixed and intermixed active regions. Measured characteristics of these lasers are used to extract information about changes in threshold current density, internal optical loss, internal quantum efficiency, material gain, etc., introduced by the impurity-free vacancy diffusion process.
DOI:10.1109/CLEO.2002.1034308