Recent advances in extreme ultraviolet sources and technology

Summary form only given. Extending deep ultraviolet micro-lithography into the extreme ultraviolet (EUV) using wavelengths around 13.5 nm is the most promising approach to meet the demands of semiconductor chip manufacturing from the year 2007 on and beyond. High throughput of EUV exposure tools of >80 wafers per hour requires bright radiation sources at 13.5 nm with average power well above 100 W. Here we give an overview of results from research and development of EUV sources. The EUV source technology under investigation is based on two concepts: gas discharge produced plasmas and laser produced plasmas. The gas discharge produced plasma EUV sources are based on low pressure gas filled Z-pinches. The laser plasma investigations are performed with an experimental setup comprising a 500 W laser system coupled to a liquid xenon-jet.