Critical density effects in sub-picosecond laser-ablation of silicon by plasma-absorption ion-energy spectroscopy

Summary from only given. It is shown in this work that the critical density condition of a plasma initially formed by a single pulse can be subsequently modified by the pumping action of a secondary time-delayed pulse. We show the results of measuring total ion yield and average energy in a pre-form...

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Hauptverfasser: Zhang, Z., VanRompay, P.A., Yalisove, S.M., Mourou, G.A., Pronko, P.P.
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container_start_page 134
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creator Zhang, Z.
VanRompay, P.A.
Yalisove, S.M.
Mourou, G.A.
Pronko, P.P.
description Summary from only given. It is shown in this work that the critical density condition of a plasma initially formed by a single pulse can be subsequently modified by the pumping action of a secondary time-delayed pulse. We show the results of measuring total ion yield and average energy in a pre-formed ablation plume generated by a 120 femtosecond (780 nm) laser pulse followed by an identical time delayed pulse.
doi_str_mv 10.1109/CLEO.2002.1033527
format Conference Proceeding
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ispartof Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002, p.134-135 vol.1
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Energy measurement
Laser ablation
Optical pulse generation
Plasma density
Plasma measurements
Pulse measurements
Pump lasers
Silicon
Spectroscopy
Time measurement
title Critical density effects in sub-picosecond laser-ablation of silicon by plasma-absorption ion-energy spectroscopy
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