Critical density effects in sub-picosecond laser-ablation of silicon by plasma-absorption ion-energy spectroscopy

Critical density effects in sub-picosecond laser-ablation of silicon by plasma-absorption ion-energy spectroscopy

Summary from only given. It is shown in this work that the critical density condition of a plasma initially formed by a single pulse can be subsequently modified by the pumping action of a secondary time-delayed pulse. We show the results of measuring total ion yield and average energy in a pre-form...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Zhang, Z., VanRompay, P.A., Yalisove, S.M., Mourou, G.A., Pronko, P.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Energy measurement
Laser ablation
Optical pulse generation
Plasma density
Plasma measurements
Pulse measurements
Pump lasers
Silicon
Spectroscopy
Time measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Summary from only given. It is shown in this work that the critical density condition of a plasma initially formed by a single pulse can be subsequently modified by the pumping action of a secondary time-delayed pulse. We show the results of measuring total ion yield and average energy in a pre-formed ablation plume generated by a 120 femtosecond (780 nm) laser pulse followed by an identical time delayed pulse.
DOI:10.1109/CLEO.2002.1033527