A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies

A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies

An original, fully analytical non-quasi-static (NQS) small-signal model of the MOS transistor is proposed for analysis and simulation of radio and microwave frequency circuits. We report results of frequency-domain analysis, the main features and experimental verification of the novel NQS four-termi...

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Hauptverfasser: Kordalski, W.J., Stefanski, T.
Format: Tagungsbericht
Sprache:eng
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Analytical models
Circuit simulation
Computational modeling
Electrons
Frequency domain analysis
Microwave circuits
Microwave frequencies
MOSFET circuits
Physics computing
Time domain analysis
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Stefanski, T.
description An original, fully analytical non-quasi-static (NQS) small-signal model of the MOS transistor is proposed for analysis and simulation of radio and microwave frequency circuits. We report results of frequency-domain analysis, the main features and experimental verification of the novel NQS four-terminal model derived in the time-domain (Kordalski, Int. Conf. on Signals and Electron. Sys., 2000). The carrier velocity saturation effect is taken into account in this model. The model is computationally efficient, physically consistent and can be applied to an arbitrary configuration of device operation.
doi_str_mv 10.1109/OCCSC.2002.1029105
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subjects Analytical models
Circuit simulation
Computational modeling
Electrons
Frequency domain analysis
Microwave circuits
Microwave frequencies
MOSFET circuits
Physics computing
Time domain analysis
title A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies
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