A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies

An original, fully analytical non-quasi-static (NQS) small-signal model of the MOS transistor is proposed for analysis and simulation of radio and microwave frequency circuits. We report results of frequency-domain analysis, the main features and experimental verification of the novel NQS four-terminal model derived in the time-domain (Kordalski, Int. Conf. on Signals and Electron. Sys., 2000). The carrier velocity saturation effect is taken into account in this model. The model is computationally efficient, physically consistent and can be applied to an arbitrary configuration of device operation.