A D-Band Wideband Low-Noise Amplifier Adopting Pseudo-Simultaneous Noise and Input Matched Dual-Peak Gmax-Core

This article presents a high-gain and wideband D -band low-noise amplifier (LNA) adopting a proposed wideband pseudo-simultaneous noise- and input-matched (p-SNIM) dual-peak (DP) maximum achievable gain ( G_{\text {max}} )-core. For a transmission line (TL)-based DP G_{\text {max}} -core, the p-SN...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2024-05, Vol.72 (5), p.3260-3273
Hauptverfasser: Lee, Hokeun, Yun, Byeonghun, Jeon, Hyoryeong, Keum, Wooyong, Lee, Sang-Gug, Choi, Kyung-Sik
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Sprache:eng
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Zusammenfassung:This article presents a high-gain and wideband D -band low-noise amplifier (LNA) adopting a proposed wideband pseudo-simultaneous noise- and input-matched (p-SNIM) dual-peak (DP) maximum achievable gain ( G_{\text {max}} )-core. For a transmission line (TL)-based DP G_{\text {max}} -core, the p-SNIM condition is satisfied by adjusting the stability factor ( K_{f} ) without requiring additional components. Comprehensive analysis of the DP G_{\text {max}} -core is performed to investigate the unique behaviors of input admittance for simultaneous conjugate matching ( Y_{\text {in}}^{\ast} ) and optimal admittance for minimum noise figure (NF) ( Y_{n\text {opt}} ) as a function of K_{f} , which is fully exploited to implement the wideband p-SNIM DP G_{\text {max}} -core. Moreover, we present the design procedure of a proposed dual-frequency inter-stage matching network that enables the wideband multistage LNA implementation. Implemented in a 40-nm CMOS technology, the D -band three-stage LNA achieves a peak power gain of 16.3 dB, a 3-dB bandwidth of 24 GHz, and a minimum NF of 4.9 dB while dissipating only 16.1 mW.
ISSN:0018-9480
DOI:10.1109/TMTT.2023.3322838