Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Metal-ferroelectric (FE)-metal structures with amorphous WOx bottom electrodes (BEs) are experimentally and theoretically demonstrated to favor the FE orthorhombic phase formation. The ferroelectric tunnel junction (FTJ) using the amorphous WOx BE and ZrO2-HfO2 superlattice FE layer has a remanent p...

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Veröffentlicht in:IEEE transactions on electron devices 2023-10, Vol.70 (10), p.5022-5027
Hauptverfasser: Zhao, Zefu, Chen, Yu-Rui, Chen, Yun-Wen, Wang, Jer-Fu, Xing, Yifan, Ji, Wang, Chen, Guan-Hua, Lee, Jia-Yang, Dobhal, Rachit, Liu, C. W.
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amorphous WOₓ electrode
Electrodes
endurance
FE tunnel junction (FTJ)
ferroelectric (FE)
Hafnium
Hafnium oxide
Iron
remanent polarization
superlattice
Switches
Tin
Zirconium
α-WOₓ/ZrO₂ interfaces
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container_end_page 5027
container_issue 10
container_start_page 5022
container_title IEEE transactions on electron devices
container_volume 70
creator Zhao, Zefu
Chen, Yu-Rui
Chen, Yun-Wen
Wang, Jer-Fu
Xing, Yifan
Ji, Wang
Chen, Guan-Hua
Lee, Jia-Yang
Dobhal, Rachit
Liu, C. W.
description Metal-ferroelectric (FE)-metal structures with amorphous WOx bottom electrodes (BEs) are experimentally and theoretically demonstrated to favor the FE orthorhombic phase formation. The ferroelectric tunnel junction (FTJ) using the amorphous WOx BE and ZrO2-HfO2 superlattice FE layer has a remanent polarization of 70~\mu \text{C} /cm2. The FTJ has high endurance of 1E12 and 1E8 cycles for the write operation with incomplete and complete polarization switching, respectively. The write and read voltages have record low values of 1.3 and −0.15 V, respectively. The −0.15-V read does not cause read disturbance due to no polarization switching. The thermal budget is as low as 450 °C.
doi_str_mv 10.1109/TED.2023.3308924
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The FTJ has high endurance of 1E12 and 1E8 cycles for the write operation with incomplete and complete polarization switching, respectively. The write and read voltages have record low values of 1.3 and −0.15 V, respectively. The −0.15-V read does not cause read disturbance due to no polarization switching. The thermal budget is as low as 450 °C.</abstract><pub>IEEE</pub><doi>10.1109/TED.2023.3308924</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-2977-5956</orcidid><orcidid>https://orcid.org/0000-0003-0796-1659</orcidid><orcidid>https://orcid.org/0000-0002-8236-0477</orcidid><orcidid>https://orcid.org/0000-0002-6439-8754</orcidid><orcidid>https://orcid.org/0009-0005-4156-531X</orcidid><orcidid>https://orcid.org/0000-0002-1564-7750</orcidid></addata></record>
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subjects amorphous WOₓ electrode
Electrodes
endurance
FE tunnel junction (FTJ)
ferroelectric (FE)
Hafnium
Hafnium oxide
Iron
remanent polarization
superlattice
Switches
Tin
Zirconium
α-WOₓ/ZrO₂ interfaces
title Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage
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