Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Metal-ferroelectric (FE)-metal structures with amorphous WOx bottom electrodes (BEs) are experimentally and theoretically demonstrated to favor the FE orthorhombic phase formation. The ferroelectric tunnel junction (FTJ) using the amorphous WOx BE and ZrO2-HfO2 superlattice FE layer has a remanent p...

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Veröffentlicht in:IEEE transactions on electron devices 2023-10, Vol.70 (10), p.5022-5027
Hauptverfasser: Zhao, Zefu, Chen, Yu-Rui, Chen, Yun-Wen, Wang, Jer-Fu, Xing, Yifan, Ji, Wang, Chen, Guan-Hua, Lee, Jia-Yang, Dobhal, Rachit, Liu, C. W.
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Sprache:eng
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Zusammenfassung:Metal-ferroelectric (FE)-metal structures with amorphous WOx bottom electrodes (BEs) are experimentally and theoretically demonstrated to favor the FE orthorhombic phase formation. The ferroelectric tunnel junction (FTJ) using the amorphous WOx BE and ZrO2-HfO2 superlattice FE layer has a remanent polarization of 70~\mu \text{C} /cm2. The FTJ has high endurance of 1E12 and 1E8 cycles for the write operation with incomplete and complete polarization switching, respectively. The write and read voltages have record low values of 1.3 and −0.15 V, respectively. The −0.15-V read does not cause read disturbance due to no polarization switching. The thermal budget is as low as 450 °C.
ISSN:0018-9383
DOI:10.1109/TED.2023.3308924