Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs

This letter reports the forward bias AC stress-induced effects of NO 2 p-type doped and Al 2 O 3 layer passivated diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) demonstrating 100 h of stable AC operation without any degradation in the output drain current. An increase in the drain current was observed owing to the long stress time. Long-term stress caused negative charges to enter into the Al 2 O 3 layer, resulting in an increase in the gate leakage current temporarily that disappeared gradually after the withdrawal of the stress. The recovery of the output characteristics depends on the release time of the trap charges. This study indicates the feasibility of diamond MOSFET for a long-period stable operation in power circuit applications.