Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through
This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt t...
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Veröffentlicht in: | IEEE solid-state circuits letters 2023, Vol.6, p.217-220 |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A. |
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ISSN: | 2573-9603 2573-9603 |
DOI: | 10.1109/LSSC.2023.3301151 |