Compact Modeling of Quantum Transport in 55-nm MOSFETs at Cryogenic Temperatures

In this letter, 55-nm commercial MOSFETs are characterized at cryogenic temperatures with a focus on quantum transport. At 1.2 K, Coulomb oscillations are observed under low drain-source voltage bias in the subthreshold region, indicating that the quantum dot (QD) exists in the channel. In view of this phenomenon, an analytical model consisting of the simplified constant interaction (CI) model and the optimized Enz-Krummenaker-Vittoz (EKV) model is developed and compatible with commercial electronic design automation (EDA) software for circuit design. This work contributes to the research on quantum transport in cryogenic MOSFETs (cryo-MOSFETs), and the compact model is expected to be implemented for advanced cryo-MOSFET circuit design.