GaN MSM UV photodetectors

GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias wa...

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Hauptverfasser:	Boratynski, B., Paszkiewicz, B., Szreter, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Detectors Electrical resistance measurement Gallium nitride Ohmic contacts Optical materials Photodetectors Schottky barriers Schottky diodes Substrates Temperature measurement
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creator	Boratynski, B. Paszkiewicz, B. Szreter, M.
description	GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.
doi_str_mv	10.1109/MIKON.2002.1017947
format	Conference Proceeding
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Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.</description><identifier>ISBN: 8390666251</identifier><identifier>ISBN: 9788390666259</identifier><identifier>DOI: 10.1109/MIKON.2002.1017947</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Electrical resistance measurement ; Gallium nitride ; Ohmic contacts ; Optical materials ; Photodetectors ; Schottky barriers ; Schottky diodes ; Substrates ; Temperature measurement</subject><ispartof>14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. 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The responsivity of 0.3 A/W was estimated.</description><subject>Detectors</subject><subject>Electrical resistance measurement</subject><subject>Gallium nitride</subject><subject>Ohmic contacts</subject><subject>Optical materials</subject><subject>Photodetectors</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Substrates</subject><subject>Temperature measurement</subject><isbn>8390666251</isbn><isbn>9788390666259</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjsFqwkAURQdKwVb9gLab_EDS9zIzLzPLIlalRhdqt_LGeaEpSiTJxr9voN67OHAXh6vUK0KGCP69XH1tN1kOkGcIWHhTPKhnpz0QUW5xpKZd9wtDtLdW-yf1suBNUu7K5PCdXH-avonSy6lv2m6iHis-dzK9c6wOn_P9bJmut4vV7GOd1ljYPg1Be8dEQRtHATCPxlXMwbtKG2ZbDCUhicN-cmxtlEA2AAi6aEj0WL39e2sROV7b-sLt7Xh_r_8A5Ps5Eg</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Boratynski, B.</creator><creator>Paszkiewicz, B.</creator><creator>Szreter, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2002</creationdate><title>GaN MSM UV photodetectors</title><author>Boratynski, B. ; Paszkiewicz, B. ; Szreter, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-bb398a66b3486b012d48faab98f34aa575756e6edd48c8a55deb65b00e18d46e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Detectors</topic><topic>Electrical resistance measurement</topic><topic>Gallium nitride</topic><topic>Ohmic contacts</topic><topic>Optical materials</topic><topic>Photodetectors</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Substrates</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Boratynski, B.</creatorcontrib><creatorcontrib>Paszkiewicz, B.</creatorcontrib><creatorcontrib>Szreter, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Boratynski, B.</au><au>Paszkiewicz, B.</au><au>Szreter, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaN MSM UV photodetectors</atitle><btitle>14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562)</btitle><stitle>MIKON</stitle><date>2002</date><risdate>2002</risdate><volume>3</volume><spage>735</spage><epage>738 vol.3</epage><pages>735-738 vol.3</pages><isbn>8390666251</isbn><isbn>9788390666259</isbn><abstract>GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.</abstract><pub>IEEE</pub><doi>10.1109/MIKON.2002.1017947</doi></addata></record>
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identifier	ISBN: 8390666251
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Detectors Electrical resistance measurement Gallium nitride Ohmic contacts Optical materials Photodetectors Schottky barriers Schottky diodes Substrates Temperature measurement
title	GaN MSM UV photodetectors
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