GaN MSM UV photodetectors

GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias wa...

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Bibliographische Detailangaben
Hauptverfasser:	Boratynski, B., Paszkiewicz, B., Szreter, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Detectors Electrical resistance measurement Gallium nitride Ohmic contacts Optical materials Photodetectors Schottky barriers Schottky diodes Substrates Temperature measurement
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Beschreibung
Zusammenfassung:	GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.
DOI:	10.1109/MIKON.2002.1017947