Aluminium oxide technology for millimeter wave devices

In this paper we present the results of the design and research of millimetre-wave amplifiers which had been manufactured on aluminium oxide substrates of a new type. The design of the amplifier is carried out based on calculated parameters offered by an equivalent scheme and measured V-I characteristics of the HEMT. The transition processes determining the mode of amplification in the HEMT amplifier have been simulated. The achieved parameters of multistage amplifiers are as follows: Gp=26 dB, NF=2.1 dB at f=28...31 GHz and Gp=24 dB, NF=2.4 dB at f=33.5...36 GHz.