The thermal effects in LDMOS transistor

This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent's program (ADS). The elaborated temperature-dependent microwav...

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Bibliographische Detailangaben
Hauptverfasser:	Michnowski, R., Wojtasiak, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electromagnetic heating Equations Finite difference methods High power amplifiers Microwave transistors Power system modeling Radar Radio transmitters Thermal conductivity Time domain analysis
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Beschreibung
Zusammenfassung:	This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent's program (ADS). The elaborated temperature-dependent microwave LDMOS model will be used to design high power amplifiers for transmitters of radar (APAR) and radiocommunication systems.
DOI:	10.1109/MIKON.2002.1017812