A 27.5-46.2-GHz Broadband Low Noise Amplifier With IP3 Enhancement
This letter presents a 27.5-46.2-GHz broadband low-noise amplifier (LNA) featuring IP3 enhancement. The LNA bandwidth (BW) is extended by implementing dual-resonant input matching and a broadband output network. The LNA IP3 is enhanced by incorporating parallel PMOS and NMOS paths in the second stag...
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Veröffentlicht in: | IEEE microwave and wireless technology letters (Print) 2023-09, Vol.33 (9), p.1-4 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter presents a 27.5-46.2-GHz broadband low-noise amplifier (LNA) featuring IP3 enhancement. The LNA bandwidth (BW) is extended by implementing dual-resonant input matching and a broadband output network. The LNA IP3 is enhanced by incorporating parallel PMOS and NMOS paths in the second stage, with their output currents combined through a three-winding transformer. Implemented using the GlobalFoundries 45-nm CMOS silicon-on-insulator (SOI) process, the LNA demonstrates 27.5-46.2 GHz effective BW, 2.1 dB minimum noise figure (NF), and 19.8 dB peak gain. The measured IIP3 is - 3.6 dBm at 34 GHz under 25.5 mW DC power consumption. Compared to recently reported broadband LNAs with a similar frequency range, this design achieves the state-of-the-art NF, IIP3, and figure-of-merit (FoM). |
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ISSN: | 2771-957X 2771-9588 |
DOI: | 10.1109/LMWT.2023.3283943 |