An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond
We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN ga...
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| creator | Tsujikawa, S. Mine, T. Shimamoto, Y. Tonomura, O. Tsuchiya, R. Ohnishi, K. Hamamura, H. Torii, K. Onai, T. Yugami, J. |
| description | We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration. |
| doi_str_mv | 10.1109/VLSIT.2002.1015453 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_ieee_primary_1015453</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1015453</ieee_id><sourcerecordid>15883442</sourcerecordid><originalsourceid>FETCH-LOGICAL-i135t-9d9d254155edf7f7653c72f4c8c30956e90938e39cd501148a19e202a0523a363</originalsourceid><addsrcrecordid>eNpFkE9Lw0AQxRdEUGq_gF7mIughcf822WMptRaqObR6LevubLuSbkqyogU_vIEIPgYevPnNHB4h14zmjFH98LZaLzc5p5TnjDIllTgjY12UtB9RCMb1BRl33QftJYXsuUvyM43wWafWZGkfInShDraJEENqg0PYmYTgAtZo-8DCV0h7aL5PO4wZxj7Zo4MQE7beWIS7apmtw8s9-KaF2XO1Hg7m1QYaDzTXEA9gooN3PDXRXZFzb-oOx38-Iq-P883sKVtVi-VsusoCEypl2mnHlWRKofOFLyZK2IJ7aUsrqFYT1FSLEoW2TlHGZGmYRk65oYoLIyZiRG6Hv0fTWVP71kQbuu2xDQfTnrZMlaWQkvfczcAFRPxfD12KXwRXZ5Q</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Tsujikawa, S. ; Mine, T. ; Shimamoto, Y. ; Tonomura, O. ; Tsuchiya, R. ; Ohnishi, K. ; Hamamura, H. ; Torii, K. ; Onai, T. ; Yugami, J.</creator><creatorcontrib>Tsujikawa, S. ; Mine, T. ; Shimamoto, Y. ; Tonomura, O. ; Tsuchiya, R. ; Ohnishi, K. ; Hamamura, H. ; Torii, K. ; Onai, T. ; Yugami, J.</creatorcontrib><description>We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.</description><identifier>ISBN: 9780780373129</identifier><identifier>ISBN: 078037312X</identifier><identifier>DOI: 10.1109/VLSIT.2002.1015453</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Absorption ; Applied sciences ; Atomic layer deposition ; Atomic measurements ; Boron ; Dielectric substrates ; Electronics ; Exact sciences and technology ; Leakage current ; Materials ; MOSFETs ; Nitrogen ; Silicon compounds ; Wet etching</subject><ispartof>2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.202-203</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1015453$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1015453$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15883442$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsujikawa, S.</creatorcontrib><creatorcontrib>Mine, T.</creatorcontrib><creatorcontrib>Shimamoto, Y.</creatorcontrib><creatorcontrib>Tonomura, O.</creatorcontrib><creatorcontrib>Tsuchiya, R.</creatorcontrib><creatorcontrib>Ohnishi, K.</creatorcontrib><creatorcontrib>Hamamura, H.</creatorcontrib><creatorcontrib>Torii, K.</creatorcontrib><creatorcontrib>Onai, T.</creatorcontrib><creatorcontrib>Yugami, J.</creatorcontrib><title>An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond</title><title>2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)</title><addtitle>VLSIT</addtitle><description>We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Atomic layer deposition</subject><subject>Atomic measurements</subject><subject>Boron</subject><subject>Dielectric substrates</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Leakage current</subject><subject>Materials</subject><subject>MOSFETs</subject><subject>Nitrogen</subject><subject>Silicon compounds</subject><subject>Wet etching</subject><isbn>9780780373129</isbn><isbn>078037312X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkE9Lw0AQxRdEUGq_gF7mIughcf822WMptRaqObR6LevubLuSbkqyogU_vIEIPgYevPnNHB4h14zmjFH98LZaLzc5p5TnjDIllTgjY12UtB9RCMb1BRl33QftJYXsuUvyM43wWafWZGkfInShDraJEENqg0PYmYTgAtZo-8DCV0h7aL5PO4wZxj7Zo4MQE7beWIS7apmtw8s9-KaF2XO1Hg7m1QYaDzTXEA9gooN3PDXRXZFzb-oOx38-Iq-P883sKVtVi-VsusoCEypl2mnHlWRKofOFLyZK2IJ7aUsrqFYT1FSLEoW2TlHGZGmYRk65oYoLIyZiRG6Hv0fTWVP71kQbuu2xDQfTnrZMlaWQkvfczcAFRPxfD12KXwRXZ5Q</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Tsujikawa, S.</creator><creator>Mine, T.</creator><creator>Shimamoto, Y.</creator><creator>Tonomura, O.</creator><creator>Tsuchiya, R.</creator><creator>Ohnishi, K.</creator><creator>Hamamura, H.</creator><creator>Torii, K.</creator><creator>Onai, T.</creator><creator>Yugami, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond</title><author>Tsujikawa, S. ; Mine, T. ; Shimamoto, Y. ; Tonomura, O. ; Tsuchiya, R. ; Ohnishi, K. ; Hamamura, H. ; Torii, K. ; Onai, T. ; Yugami, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-9d9d254155edf7f7653c72f4c8c30956e90938e39cd501148a19e202a0523a363</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Atomic layer deposition</topic><topic>Atomic measurements</topic><topic>Boron</topic><topic>Dielectric substrates</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Leakage current</topic><topic>Materials</topic><topic>MOSFETs</topic><topic>Nitrogen</topic><topic>Silicon compounds</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsujikawa, S.</creatorcontrib><creatorcontrib>Mine, T.</creatorcontrib><creatorcontrib>Shimamoto, Y.</creatorcontrib><creatorcontrib>Tonomura, O.</creatorcontrib><creatorcontrib>Tsuchiya, R.</creatorcontrib><creatorcontrib>Ohnishi, K.</creatorcontrib><creatorcontrib>Hamamura, H.</creatorcontrib><creatorcontrib>Torii, K.</creatorcontrib><creatorcontrib>Onai, T.</creatorcontrib><creatorcontrib>Yugami, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsujikawa, S.</au><au>Mine, T.</au><au>Shimamoto, Y.</au><au>Tonomura, O.</au><au>Tsuchiya, R.</au><au>Ohnishi, K.</au><au>Hamamura, H.</au><au>Torii, K.</au><au>Onai, T.</au><au>Yugami, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond</atitle><btitle>2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)</btitle><stitle>VLSIT</stitle><date>2002</date><risdate>2002</risdate><spage>202</spage><epage>203</epage><pages>202-203</pages><isbn>9780780373129</isbn><isbn>078037312X</isbn><abstract>We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/VLSIT.2002.1015453</doi><tpages>2</tpages></addata></record> |
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| identifier | ISBN: 9780780373129 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Applied sciences Atomic layer deposition Atomic measurements Boron Dielectric substrates Electronics Exact sciences and technology Leakage current Materials MOSFETs Nitrogen Silicon compounds Wet etching |
| title | An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T14%3A21%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20ultra-thin%20silicon%20nitride%20gate%20dielectric%20with%20oxygen-enriched%20interface%20(OI-SiN)%20for%20CMOS%20with%20EOT%20of%200.9%20nm%20and%20beyond&rft.btitle=2002%20Symposium%20on%20VLSI%20Technology.%20Digest%20of%20Technical%20Papers%20(Cat.%20No.01CH37303)&rft.au=Tsujikawa,%20S.&rft.date=2002&rft.spage=202&rft.epage=203&rft.pages=202-203&rft.isbn=9780780373129&rft.isbn_list=078037312X&rft_id=info:doi/10.1109/VLSIT.2002.1015453&rft_dat=%3Cpascalfrancis_6IE%3E15883442%3C/pascalfrancis_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1015453&rfr_iscdi=true |