An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN ga...

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Hauptverfasser: Tsujikawa, S., Mine, T., Shimamoto, Y., Tonomura, O., Tsuchiya, R., Ohnishi, K., Hamamura, H., Torii, K., Onai, T., Yugami, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Applied sciences
Atomic layer deposition
Atomic measurements
Boron
Dielectric substrates
Electronics
Exact sciences and technology
Leakage current
Materials
MOSFETs
Nitrogen
Silicon compounds
Wet etching
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Zusammenfassung:We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.
DOI:10.1109/VLSIT.2002.1015453