Structural characterization of porous low-k SiOC thin films using x-ray porosimetry

Structural characterization of porous low-k SiOC thin films using x-ray porosimetry

A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases...

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Hauptverfasser: Hae-Jeong Lee, Yoon-Hae Kim, Jin Yong Kim, Lin, E.K., Bauer, B.J., Wen-li Wu, Hyeong Joon Kim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectric constant
Dielectric materials
Dielectric measurements
Dielectric thin films
Integrated circuit noise
Mechanical factors
Plasma temperature
Reflectivity
Transistors
Wavelength measurement
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Beschreibung
Zusammenfassung:A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200/spl deg/C results in good mechanical properties with a dielectric constant as low as 2.5.
DOI:10.1109/IITC.2002.1014885