Optical investigations on InP and GaInP quantum dots

Optical investigations on InP and GaInP quantum dots

We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured...

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Bibliographische Detailangaben
Hauptverfasser: Jetter, M., Beirne, G., Rossi, M., Porsche, J., Scholz, F., Schweizer, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gain measurement
Indium phosphide
Performance evaluation
Photoluminescence
Power measurement
Quantum dots
Radiative recombination
Temperature dependence
Temperature measurement
Time measurement
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Beschreibung
Zusammenfassung:We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2002.1014492