Multi-Parameter Optimization of a Shallow Ridge InP Traveling Wave Mach-Zehnder Modulator for Beyond 200 Gb/s Optical Datacom Applications

We present multi-parameter optimization of a shallow ridge InP-based traveling wave Mach-Zehnder modulator (MZM) for ultra-wide modulation bandwidth by velocity and impedance matching and microwave attenuation minimization. Relationship between MZM microwave loss and p-cladding layer doping profile...

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Veröffentlicht in:	IEEE photonics journal 2023-06, Vol.15 (3), p.1-7
Hauptverfasser:	Yao, Ruoyun, Xiong, Wanshu, Peng, Zhangwan, Pan, Weiwei, Ying, Xiaojun, Liu, Yili, Xiong, Yiti, Ji, Chen
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Bandwidths High-speed III-V semiconductor materials Impedance matching Indium phosphide Indium phosphides InP Integrated optics Mach-Zehnder interferometers Mach-Zehnder modulator Microwave attenuation Optical design Optical polarization Optical waveguides Optimization Parameters shallow ridge traveling wave Traveling waves
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Zusammenfassung:	We present multi-parameter optimization of a shallow ridge InP-based traveling wave Mach-Zehnder modulator (MZM) for ultra-wide modulation bandwidth by velocity and impedance matching and microwave attenuation minimization. Relationship between MZM microwave loss and p-cladding layer doping profile is quantitatively analyzed and incorporated in device optimization. We propose a systematic analysis methodology allowing the full optimization of an InP shallow ridge MZM capable of 200 Gb/s PAM4 operation, compatible with high-volume low-cost manufacturing. Our design is expected to achieve 4.3 V half-wave voltage and 81 GHz 3-dB bandwidth with simplified fabrication process and improved long-term reliability.
ISSN:	1943-0655 1943-0647
DOI:	10.1109/JPHOT.2023.3282651