A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH

A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH

The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 /spl mu/s. Algorithm control circuits occupy 1...

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Bibliographische Detailangaben
Hauptverfasser: Engh, L.D., Kordesch, A.V., Chun-Mai Liu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Circuits
Current measurement
Electronics
Exact sciences and technology
Flash memory
Flash memory cells
Integrated circuits
Integrated circuits by function (including memories and processors)
Iterative algorithms
Linear programming
Nonvolatile memory
Parallel programming
Pulse measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Voltage
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Beschreibung
Zusammenfassung:The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 /spl mu/s. Algorithm control circuits occupy 1 mm/sup 2/ of area in a 0.5 /spl mu/m SSI FLASH process.
DOI:10.1109/CICC.2002.1012779