Implementation of a scalable and statistical VBIC model for large-signal and intermodulation distortion analysis of SiGe HBTs

This work examines for the first time the utility of the VBIC model for the analysis of 2-tone intermodulation distortion behavior of SiGe HBTs. The model takes into account all important effects for accurate modeling of large signal behavior including self-heating, weak-avalanche multiplication, qu...

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Hauptverfasser:	Ramana Murty, M., Newton, K.M., Sweeney, S.L., Sheridan, D.C., Harame, D.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Circuit simulation Distortion measurement Germanium silicon alloys Heterojunction bipolar transistors Intermodulation distortion Isolation technology Performance evaluation Radio frequency Silicon germanium
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Beschreibung
Zusammenfassung:	This work examines for the first time the utility of the VBIC model for the analysis of 2-tone intermodulation distortion behavior of SiGe HBTs. The model takes into account all important effects for accurate modeling of large signal behavior including self-heating, weak-avalanche multiplication, quasi-saturation effects, and all device capacitances. Periodic-Steady State and Harmonic Balance simulations are performed and the model is validated by load-pull measurements.
ISSN:	0149-645X 2576-7216
DOI:	10.1109/MWSYM.2002.1012300