GaAs HBT operating as integrated V- to W-band Gunn oscillator

GaAs HBT operating as integrated V- to W-band Gunn oscillator

Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single dev...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) 2002, Vol.3, p.1737-1740 vol.3
Hauptverfasser: Rudolph, M., Doerner, R., Heymann, P.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Frequency
Gallium arsenide
Gunn devices
Heterojunction bipolar transistors
Injection-locked oscillators
Microwave oscillators
MMICs
Power generation
Radar
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1740 vol.3
container_issue
container_start_page 1737
container_title 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
container_volume 3
creator Rudolph, M.
Doerner, R.
Heymann, P.
description Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.
doi_str_mv 10.1109/MWSYM.2002.1012196
format Article
fullrecord <record><control><sourceid>proquest_6IE</sourceid><recordid>TN_cdi_ieee_primary_1012196</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1012196</ieee_id><sourcerecordid>27164784</sourcerecordid><originalsourceid>FETCH-LOGICAL-i119t-84801582db289dcc0c705dd37d1d6516436e70f223514290ead12217c3f90c7f3</originalsourceid><addsrcrecordid>eNotkE1LAzEQhoMfYKn9A3rJyVvqTD43Bw9VtBVaPFitnpZ0ky2Rdrdutgf_vYF2eGF44eFhGEJuEMaIYO8Xq_fvxZgD8DECcrT6jAy4MpoZjvqcjKwpIEcYLqy9IANAaZmW6uuKjFL6gTxSgQUxIA9TN0l09rik7T50ro_NhrpEY9OHTa7B009G-5au2No1nk4PTUPbVMXt1vVtd00ua7dNYXTaQ_Lx8rx8mrH52_T1aTJnEdH2rJAFoCq4X_PC-qqCyoDyXhiPXivUUuhgoOZcKJTcQnAeOUdTidpmthZDcnf07rv29xBSX-5iqkI-ogntIZXcZIkpZAZvj2AMIZT7Lu5c91eeviT-Ab9sVjg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27164784</pqid></control><display><type>article</type><title>GaAs HBT operating as integrated V- to W-band Gunn oscillator</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Rudolph, M. ; Doerner, R. ; Heymann, P.</creator><creatorcontrib>Rudolph, M. ; Doerner, R. ; Heymann, P.</creatorcontrib><description>Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780372399</identifier><identifier>ISBN: 0780372395</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.2002.1012196</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Frequency ; Gallium arsenide ; Gunn devices ; Heterojunction bipolar transistors ; Injection-locked oscillators ; Microwave oscillators ; MMICs ; Power generation ; Radar</subject><ispartof>2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1737-1740 vol.3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1012196$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,4038,4039,27912,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1012196$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rudolph, M.</creatorcontrib><creatorcontrib>Doerner, R.</creatorcontrib><creatorcontrib>Heymann, P.</creatorcontrib><title>GaAs HBT operating as integrated V- to W-band Gunn oscillator</title><title>2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)</title><addtitle>MWSYM</addtitle><description>Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.</description><subject>Circuits</subject><subject>Frequency</subject><subject>Gallium arsenide</subject><subject>Gunn devices</subject><subject>Heterojunction bipolar transistors</subject><subject>Injection-locked oscillators</subject><subject>Microwave oscillators</subject><subject>MMICs</subject><subject>Power generation</subject><subject>Radar</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780372399</isbn><isbn>0780372395</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEQhoMfYKn9A3rJyVvqTD43Bw9VtBVaPFitnpZ0ky2Rdrdutgf_vYF2eGF44eFhGEJuEMaIYO8Xq_fvxZgD8DECcrT6jAy4MpoZjvqcjKwpIEcYLqy9IANAaZmW6uuKjFL6gTxSgQUxIA9TN0l09rik7T50ro_NhrpEY9OHTa7B009G-5au2No1nk4PTUPbVMXt1vVtd00ua7dNYXTaQ_Lx8rx8mrH52_T1aTJnEdH2rJAFoCq4X_PC-qqCyoDyXhiPXivUUuhgoOZcKJTcQnAeOUdTidpmthZDcnf07rv29xBSX-5iqkI-ogntIZXcZIkpZAZvj2AMIZT7Lu5c91eeviT-Ab9sVjg</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Rudolph, M.</creator><creator>Doerner, R.</creator><creator>Heymann, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2002</creationdate><title>GaAs HBT operating as integrated V- to W-band Gunn oscillator</title><author>Rudolph, M. ; Doerner, R. ; Heymann, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i119t-84801582db289dcc0c705dd37d1d6516436e70f223514290ead12217c3f90c7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Circuits</topic><topic>Frequency</topic><topic>Gallium arsenide</topic><topic>Gunn devices</topic><topic>Heterojunction bipolar transistors</topic><topic>Injection-locked oscillators</topic><topic>Microwave oscillators</topic><topic>MMICs</topic><topic>Power generation</topic><topic>Radar</topic><toplevel>online_resources</toplevel><creatorcontrib>Rudolph, M.</creatorcontrib><creatorcontrib>Doerner, R.</creatorcontrib><creatorcontrib>Heymann, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rudolph, M.</au><au>Doerner, R.</au><au>Heymann, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaAs HBT operating as integrated V- to W-band Gunn oscillator</atitle><jtitle>2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)</jtitle><stitle>MWSYM</stitle><date>2002</date><risdate>2002</risdate><volume>3</volume><spage>1737</spage><epage>1740 vol.3</epage><pages>1737-1740 vol.3</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780372399</isbn><isbn>0780372395</isbn><abstract>Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2002.1012196</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0149-645X
ispartof 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1737-1740 vol.3
issn 0149-645X
2576-7216
language eng
recordid cdi_ieee_primary_1012196
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuits
Frequency
Gallium arsenide
Gunn devices
Heterojunction bipolar transistors
Injection-locked oscillators
Microwave oscillators
MMICs
Power generation
Radar
title GaAs HBT operating as integrated V- to W-band Gunn oscillator
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T00%3A42%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaAs%20HBT%20operating%20as%20integrated%20V-%20to%20W-band%20Gunn%20oscillator&rft.jtitle=2002%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest%20(Cat.%20No.02CH37278)&rft.au=Rudolph,%20M.&rft.date=2002&rft.volume=3&rft.spage=1737&rft.epage=1740%20vol.3&rft.pages=1737-1740%20vol.3&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=9780780372399&rft.isbn_list=0780372395&rft_id=info:doi/10.1109/MWSYM.2002.1012196&rft_dat=%3Cproquest_6IE%3E27164784%3C/proquest_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27164784&rft_id=info:pmid/&rft_ieee_id=1012196&rfr_iscdi=true