GaAs HBT operating as integrated V- to W-band Gunn oscillator

GaAs HBT operating as integrated V- to W-band Gunn oscillator

Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single dev...

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Veröffentlicht in:2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) 2002, Vol.3, p.1737-1740 vol.3
Hauptverfasser: Rudolph, M., Doerner, R., Heymann, P.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Frequency
Gallium arsenide
Gunn devices
Heterojunction bipolar transistors
Injection-locked oscillators
Microwave oscillators
MMICs
Power generation
Radar
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Zusammenfassung:Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1012196