A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications

A distributed amplifier with greater than 13.4 dB gain and 65 GHz bandwidth has been demonstrated using 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifier has an average noise figure of 3.1 dB from 2-40 GHz and an output 1-dB compression point of 11 dBm at 22 GHz. The group delay variati...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Heins, M.S., Campbell, C.F., Kao, M.-Y., Muir, M.E., Carroll, J.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Delay Distributed amplifiers Gain Gallium arsenide HEMTs mHEMTs Noise figure Optical amplifiers Voltage
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