A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications

A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications

A distributed amplifier with greater than 13.4 dB gain and 65 GHz bandwidth has been demonstrated using 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifier has an average noise figure of 3.1 dB from 2-40 GHz and an output 1-dB compression point of 11 dBm at 22 GHz. The group delay variati...

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Bibliographische Detailangaben
Hauptverfasser: Heins, M.S., Campbell, C.F., Kao, M.-Y., Muir, M.E., Carroll, J.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Delay
Distributed amplifiers
Gain
Gallium arsenide
HEMTs
mHEMTs
Noise figure
Optical amplifiers
Voltage
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Beschreibung
Zusammenfassung:A distributed amplifier with greater than 13.4 dB gain and 65 GHz bandwidth has been demonstrated using 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifier has an average noise figure of 3.1 dB from 2-40 GHz and an output 1-dB compression point of 11 dBm at 22 GHz. The group delay variation from 1 to 40 GHz is /spl plusmn/7.5 ps. The amplifier may be biased with a single supply voltage, and consumes only 105 mW. With these characteristics, the amplifier is ideally suited for 40-Gb/s optical networks.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011822