Performance analysis of monolithic RF transformers by experimental characterization

Performance analysis of monolithic RF transformers by experimental characterization

Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytica...

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Hauptverfasser: Kamgaing, T., Myers, T., Feng Ling, Petras, M., Miller, M., Ramahi, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Inductance
Mutual coupling
Performance analysis
Radio frequency
Radiofrequency integrated circuits
Scattering parameters
Silicon
Spirals
Transformers
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creator Kamgaing, T.
Myers, T.
Feng Ling
Petras, M.
Miller, M.
Ramahi, O.
description Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytical models, based on measurements from 50 MHz to 20 GHz, are used to explore achievable device performance under different design constraints.
doi_str_mv 10.1109/MWSYM.2002.1011594
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identifier ISSN: 0149-645X
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Copper
Inductance
Mutual coupling
Performance analysis
Radio frequency
Radiofrequency integrated circuits
Scattering parameters
Silicon
Spirals
Transformers
title Performance analysis of monolithic RF transformers by experimental characterization
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