Performance analysis of monolithic RF transformers by experimental characterization

Performance analysis of monolithic RF transformers by experimental characterization

Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytica...

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Bibliographische Detailangaben
Hauptverfasser: Kamgaing, T., Myers, T., Feng Ling, Petras, M., Miller, M., Ramahi, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Inductance
Mutual coupling
Performance analysis
Radio frequency
Radiofrequency integrated circuits
Scattering parameters
Silicon
Spirals
Transformers
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Beschreibung
Zusammenfassung:Electrical performances of 4-port n:n dual-spiral transformers fabricated in a thick plated copper on silicon process are analyzed. Multiport data analysis techniques and compact modeling are used to study the relationships between the physical and the electrical attributes of the devices. Analytical models, based on measurements from 50 MHz to 20 GHz, are used to explore achievable device performance under different design constraints.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011594