Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge"

Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge"

In the above article [1] , equations (33) and (36) had a typing error. The correct equations are:

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Bibliographische Detailangaben
Veröffentlicht in:IEEE access 2023, Vol.11, p.39650-39650
Hauptverfasser: Pino-Monroy, Dayana A., Scheer, Patrick, Bouchoucha, Mohamed Khalil, Galup-Montoro, Carlos, Barragan, Manuel J., Cathelin, Philippe, Fournier, Jean-Michel, Cathelin, Andreia, Bourdel, Sylvain
Format: Artikel
Sprache:eng
Schlagworte:
Mathematical models
MOSFET
Semiconductor device modeling
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:In the above article [1] , equations (33) and (36) had a typing error. The correct equations are:
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3267218