Performance Enhancement of Thin-Film Transistor Based on In } O } :F/In } O } Homojunction

In this article, we demonstrate a high-performance thin film transistor (TFT) based on a double-stack fluorine-doped In _{\text{2}} O _{\text{3}} /In _{\text{2}} O _{\text{3}} (InFO/InO) homojunction channel. The InFO and In _{\text{2}} O _{\text{3}} semiconductor thin films were fabricated by solution process and acted as front and back channels, respectively. By using the unique bandgap characteristic of fluorine dopant, the TFT based on the InFO/InO homojunction channel exhibits improved electrical performance, including a field-effect mobility ( \mu _{\text{FE}}\text{)} of 5.69 cm ^{\text{2}} /Vs and a high ON/OFF current ( \textit{I}_{\text{on}} / \textit{I}_{\text{off}}\text{)} ratio of 10 ^{\text{8}} . X-ray photoelectron spectroscopy (XPS) analysis proves the importance of the InFO film as the front channel. Furthermore, the InFO/InO TFT was integrated with the Al _{\text{2}} O _{\text{3}} dielectric. The TFT exhibits great improvement in electrical performance, including a large \mu _{\text{FE}} of 31.49 cm ^{\text{2}} /Vs, high \textit{I}_{\text{on}} / \textit{I}_{\text{off}} ( \sim 10