High-Voltage Closing Switches With Nanosecond Switching Time Based on Shock Ionization Dynistors Connected in Series

Closing switches based on series-connected shock ionization dynistors (SIDs) with an operating voltage of 16 and 24 kV are described. Various schemes for constructing these switches are considered. It is shown that experimental SID blocks based on series-connected chips with a diameter of 24 mm at a...

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Veröffentlicht in:IEEE transactions on plasma science 2023-05, Vol.51 (5), p.1-5
Hauptverfasser: Korotkov, Sergey, Aristov, Yury, Zhmodikov, Alexander, Korotkov, Dmitry
Format: Artikel
Sprache:eng
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Zusammenfassung:Closing switches based on series-connected shock ionization dynistors (SIDs) with an operating voltage of 16 and 24 kV are described. Various schemes for constructing these switches are considered. It is shown that experimental SID blocks based on series-connected chips with a diameter of 24 mm at a repetition rate of 500 Hz are capable of switching sub-microsecond current pulses with an amplitude of \sim 4 kA, and in the single-pulse mode, they are capable of switching current pulses with an amplitude of \sim 17 kA and a rise rate of \sim 50 A/ns. The prospects for increasing the switched power of the developed high-voltage SID switches are determined.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2023.3264485