100 Gbit/s PAM-4 Linear Burst-Mode Transimpedance Amplifier for Upstream Flexible Passive Optical Networks
Next-generation passive optical networks (PONs) with upstream rates of 50 Gbit/s and beyond will require a new class of burst-mode transimpedance amplifiers (BMTIAs) that are linear to enable (digital) equalization of channel impairments. Such linear BMTIAs also enable higher-order modulation format...
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Veröffentlicht in: | Journal of lightwave technology 2023-06, Vol.41 (12), p.1-8 |
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Sprache: | eng |
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Zusammenfassung: | Next-generation passive optical networks (PONs) with upstream rates of 50 Gbit/s and beyond will require a new class of burst-mode transimpedance amplifiers (BMTIAs) that are linear to enable (digital) equalization of channel impairments. Such linear BMTIAs also enable higher-order modulation formats like 4-level pulse amplitude modulation (PAM-4). In this paper, we demonstrate operation of a novel linear BMTIA integrated together with a commercial off-the-shelf 25G-class avalanche photodiode (APD), achieving 50 Gbit/s non-return-to-zero (NRZ) operation with a sensitivity of -23.7 dBm optical modulation amplitude (OMA) and dynamic range exceeding 21.7 dB and 100 Gbit/s PAM-4 operation with a sensitivity of -15.8 dBm OMA and dynamic range exceeding 15.4 dB, both at a bit error ratio (BER) of 10^{-2}. In addition, fast burst-mode gain-control and balancing circuits limit loud-soft sensitivity penalties in the case of AC-coupled circuits to less than 1.3 dB. The chip was designed in a 0.13 \mum SiGe:C BiCMOS technology, has an area of 1.2×1.7 mm^{2} and consumes between 260 mW and 310 mW. This receiver paves the way to a next-generation class of BMTIAs, supporting the ITU-T G.9804.3 Amd 1 standard. |
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ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/JLT.2023.3262319 |