A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies

A highly manufacturable and defect-free shallow trench isolation (STI) process is demonstrated by using 64M DRAM as a sensitive monitor. In the STI flow, a special sequence of extra anneal (1100C) after corner oxidation (i.e., liner oxide) and an RTA (1000C) anneal after HDP CVD oxide deposition can...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lien, W.Y., Yeh, W.G., Li, C.H., Tu, K.C., Chang, I.H., Chu, H.C., Liaw, W.R., Lee, H.F., Chou, H.M., Chen, C.Y., Chi, M.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Etching Isolation technology Manufacturing processes Oxidation Random access memory Semiconductor device manufacture Silicon compounds Substrates Thermal stresses
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