The FMR behavior of Fe single layer

Summary form only given. GaAs(001)/ Fe 40nm/ Ag 2nm epitaxial films were fabricated by MBE technique. The main epitaxial relationship is GaAs(001)[110]/Fe(001)[110]/Ag(001)[100] for the deposition temperature of iron, T g ⩾ 100°C. From the study of longitudinal magneto-optical Kerr effect, we observed two-step magnetic switching behavior along Fe[l10] and [1-10]. This indicates that these films have a strong crystalline induced biaxial magnetic anisotropy. Interestingly, for T g ⩽ 1OO°C, the images of atomic force microscopy show that there are many surface defects with height~ lOnm and lateral dimension~ l0Onm on the film surface, as shown in Fig. 1, and the defect density drops rapidly while increasing the T g . For example, the defect density for T g = 50°C, 100°C and 200°C is 37, 18 and 0 per μm 2 .