Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during trigger...

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Veröffentlicht in:	Microelectronics and reliability 2009-12, Vol.49 (12), p.1424-1432
Hauptverfasser:	Manouvrier, Jean-Robert, Fonteneau, Pascal, Legrand, Charles-Alexandre, Nouet, Pascal, Azaïs, Florence
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Micro and nanotechnologies Microelectronics
Online-Zugang:	Volltext
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