Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during trigger...

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Veröffentlicht in:Microelectronics and reliability 2009-12, Vol.49 (12), p.1424-1432
Hauptverfasser: Manouvrier, Jean-Robert, Fonteneau, Pascal, Legrand, Charles-Alexandre, Nouet, Pascal, Azaïs, Florence
Format: Artikel
Sprache:eng
Schlagworte:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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Zusammenfassung:A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2009.06.056