Electro-thermal short pulsed simulation for SOI technology

Electro-thermal short pulsed simulation for SOI technology

This work investigates the determination of thermal boundary conditions for electro-thermal simulations in case of short duration stressing event for SOI devices. An analysis of the heat flow inside the structure is given showing an important thermal role of contacts in deep submicron SOI devices. T...

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Veröffentlicht in:Microelectronics and reliability 2006-09, Vol.46 (9), p.1482-1485
Hauptverfasser: Entringer, Christophe, Flatresse, Philippe, Galy, Philippe, Azais, Florence, Nouet, Pascal
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Diodes
Electronics
Engineering Sciences
Exact sciences and technology
Micro and nanotechnologies
Microelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:This work investigates the determination of thermal boundary conditions for electro-thermal simulations in case of short duration stressing event for SOI devices. An analysis of the heat flow inside the structure is given showing an important thermal role of contacts in deep submicron SOI devices. These boundary conditions are applied to ISE simulations of a partially depleted 130nm SOI diode during an ESD event and a good matching with TLP experimental results has been obtained.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2006.07.015