Light-ion beam for microelectronic applications

In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ=450nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have b...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2005-10, Vol.240 (1-2), p.265-270
Hauptverfasser: Hirsch, L., Tardy, P., Wantz, G., Huby, N., Moretto, P., Serani, L., Natali, F., Damilano, B., Duboz, J.Y., Reverchon, J.L.
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Sprache:eng
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Zusammenfassung:In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ=450nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10°, 25° and 50°). In a second part of the paper, ion beam induced charges study has been carried out, with a 2MeV 4He+ micro-beam, on metal–semiconductor–metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes.
ISSN:0168-583X
1872-9584
1872-9584
0168-583X
DOI:10.1016/j.nimb.2005.06.127