Inhomogeneous defect activation by rapid thermal processes in silicon

In silicon, rapid thermal processes are observed to induce recombination centers whose distribution as a function of the depth below the surfaces shows an extremum towards the middle of 1000-μm-thick samples. This nonhomogeneous defect activation is correlated to a surface effect. Impurity-related c...

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Veröffentlicht in:	Applied physics letters 1989-03, Vol.54 (13), p.1235-1237
Hauptverfasser:	VU THUONG-QUAT, EICHHAMMER, W, SIFFERT, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Instrumentation and Detectors Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In silicon, rapid thermal processes are observed to induce recombination centers whose distribution as a function of the depth below the surfaces shows an extremum towards the middle of 1000-μm-thick samples. This nonhomogeneous defect activation is correlated to a surface effect. Impurity-related complexes are believed to be the origin of these recombination centers.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.100726