Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterised by secondary ion emission mas...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1994-02, Vol.84 (3), p.303-309
Hauptverfasser:	Allali, H, Cabaud, B, Fuchs, G, Hoareau, A, Nsouli, B, Thomas, J-P, Treilleux, M, Danel, J.-S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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