Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterised by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred to as HSF-SIMS [B.U.R. Sundqvist, in: Sputtering by Particle Bombardment III, eds. R. Behrisch and K. Wittmaack (Springer, Berlin, Heidelberg, 1991) p. 257]). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate (Θ) and (or) the morphology of particular films like those produced by low energy cluster beam deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and Θ is interpreted in terms of sputtering enhancement in the individual supported clusters.