X-ray emission spectra and interfacial solid-phase reactions in Hf/(001)Si system

High energy resolved X-ray emission spectroscopy with variable electron beam excitation is applied for the study of solid-phase reactions in the Hf/(001)Si system at different annealing temperatures. It is found that annealing at 700°C is accompanied by formation of HfSi. The HfSi 2 phase is formed at 780°C. The formation of Hf silicides in depth is studied by measurements of Si L 2,3 X-ray emission valence spectra under different accelerating voltages. The data obtained by means of X-ray emission spectroscopy are compared with those obtained by means of Rutherford backscattering and electron-probe microanalysis techniques.