Homoepitaxial growth of device-grade GaAs using low-pressure remote plasma CVD

We have achieved the growth of high-quality, homoepitaxial 100 GaAs thin films at 0.5 mbar and 500 °C using a Remote Plasma Chemical Vapor Deposition (RP-CVD) reactor. With this process, we demonstrate a film growth rate up to 3 μm/h, comparable to the conventional MOCVD technique. The resulting fil...

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Veröffentlicht in:	Materials science in semiconductor processing 2025-02, Vol.186, p.109069, Article 109069
Hauptverfasser:	Watrin, Lise, Silva, François, Largeau, Ludovic, Findling, Nathaniel, Al Katrib, Mirella, Bouttemy, Muriel, Dembélé, Kassiogé, Vaissière, Nicolas, Jadaud, Cyril, Bulkin, Pavel, Vanel, Jean-Charles, Johnson, Erik V., Ouaras, Karim, Cabarrocas, Pere Roca i
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences
Online-Zugang:	Volltext
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