FEM modeling of magnetoelectric composites using line elements for thin film structure

This study conducts a comprehensive computational analysis of thin film deposited magnetoelectric (ME) composites, focusing on two distinct configurations: the self-biased Ni/(YXl)163° LiNbO 3 /Ni and the non-self-biased Ni/PZT-5H/Ni. This involves employing a multiphysics simulation tool based on the Finite Element Method (FEM). Our FEM modeling utilizes the line elements formulation, to facilitate the simulation of thin magnetostrictive Ni layers (10 µm thick), and integrates a magnetoelastic anhysteretic model to account for the nonlinear interactions within the magnetostrictive coupling. This FEM model is capable of predicting the anhysteretic nonlinear ME behavior and the ME performance under optimal working condition.