Low loss SiN films for integrated photonics deposited by PVD at low temperature

Integration of SiN films with Si photonics platforms is attractive for the 3D integration of multiple waveguide levels in optical routing circuits. This paper reports on the optical characterization of SiN films deposited by PVD and PECVD with the STMicroelectronics 300 mm Photonic R&D platform at CMOS-compatible temperatures. SiN deposition was engineered to reduce the propagation losses caused by 2 nd harmonic vibrational absorption of NH bonds.