An in situ growth route towards anti-perovskite Ni 3 InN nanoparticles embedded within amorphous silicon nitride

Herein, we report a new approach toward the design of anti-perovskite nitrides at the nanoscale. This study deals with a precursor route to in situ grow anti-perovskite nickel indium nitride (Ni 3 InN) nanoparticles (NPs) in amorphous silicon nitride (a-SiN). Precursors are synthesized via the modification of polysilazanes (PSZs) by using controlled amounts of nickel (NiCl 2 ) and indium (InCl 3 ) chlorides. Subsequently, the as-synthesized precursors are pyrolyzed in the temperature range of 300–600 °C in flowing ammonia (NH 3 ) to afford Ni 3 InN/a-SiN nanocomposites. The single-step process is discussed based on a complete set of characterization techniques, including elemental analyses, X-ray diffraction (XRD), thermogravimetric-mass spectrometric (TG-MS) analyses, infrared and X-ray photoelectron spectroscopies, and transmission electron microscopy (TEM) observations. It has been demonstrated that the synthesis of precursors proceeded via the prior formation of Ni NPs at 300 °C before the subsequent migration of In species, which governs the in situ formation of the nanoscale anti-perovskite Ni 3 InN phase in the matrix. As a proof of concept, we investigated CO 2 adsorption–desorption capabilities of this new type of self-supported nanocatalyst.