Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part I: Spectroscopic properties and assignment of energy levels

Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part I: Spectroscopic properties and assignment of energy levels

Spectroscopic characterization were carried out to identify Stark’s levels of Yb3+ transitions in the Gd3+ dodecahedral S4 crystallographic site in Gd3Ga5O12 garnet crystals which are grown by the micro-pulling down technique. Yb3+ concentration dependence of the 2F5/2 excited level experimental dec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Optical materials 2005-10, Vol.27 (11), p.1658-1663
Hauptverfasser: Guyot, Y., Canibano, H., Goutaudier, C., Novoselov, A., Yoshikawa, A., Fukuda, T., Boulon, G.
Format: Artikel
Sprache:eng
Schlagworte:
Energy levels
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GGG garnet host
Laser crystals
Laser materials
Laser prediction
Optical materials
Optics
Physics
Quenching
Yb3+ laser ion
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Spectroscopic characterization were carried out to identify Stark’s levels of Yb3+ transitions in the Gd3+ dodecahedral S4 crystallographic site in Gd3Ga5O12 garnet crystals which are grown by the micro-pulling down technique. Yb3+ concentration dependence of the 2F5/2 excited level experimental decay time was analyzed in order to understand involved concentration quenching mechanisms.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2004.11.052