High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with tMgO=2.5 nm. This...

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Veröffentlicht in:Applied physics letters 2003-06, Vol.82 (25), p.4507-4509
Hauptverfasser: Faure-Vincent, J., Tiusan, C., Jouguelet, E., Canet, F., Sajieddine, M., Bellouard, C., Popova, E., Hehn, M., Montaigne, F., Schuhl, A.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Physics
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Zusammenfassung:We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with tMgO=2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière’s model, can be understood in the framework of ab initio calculations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1586785